GaN Power Device Design Expert (VP level)

International CDI

Ajoutée le 21/10/2022

  • Own technical advantages over competitors in GaN HEMT R&D; IDM model
  • Competitive salary; partner level stock/option incentives

À propos de notre client

Our customer, as the new force in the field of silicon based GaN power devices, was founded by a team of overseas returnees with PhD degree, focusing on the development of new generation GaN HEMT devices. At present, it has obtained several rounds of strategic financing and is capable of IDM.

Description du poste

  • Engaged in the physical design of silicon based GaN power devices, and led the team to take full responsibility for R&D management and project promotion;
  • Characterise and analyse the electrical performance of GaN power devices, and propose a feasible scheme to improve the performance based on fundamental physical analysis and device designs;
  • Lead the design team to design the structure (lateral and vertical structure) of GaN power devices, and cooperate with the process team to fix the process flow;
  • Be responsible for product reliability design and reliability improvement from device to product



To apply online please click the 'Apply' button below. For a confidential discussion about this role please contact Bobby Song on +65 6488 8138.

Profil recherché

  • Master degree in materials physics, microelectronic physics and other major related, with at least 8 years in conducting GaN device R&D, a PhD degree is preferred;
  • Have a solid research background and rich experience in GaN device physics and products;
  • Ability to analyze and solve problems in person, and having the experience of managing a group of design team with more than 20 people is preferred.
  • Good learning ability and teamwork spirit;
  • Good professional ethics, including keeping the company's secrets and safeguarding the company's rights and interests.

Conditions et Avantages

Competitive salary; partner level stock/option incentives; Chance to lead an experienced deign team

Contact
Bobby Song
Indiquer la référence de l'offre
JN-092022-5775362

Résumé du poste

Spécialisation
Ingénierie & Industries
Sous-secteur
Etudes/R&D
Secteur
Electronique
Localisation
International
Type de contrat
CDI
Nom du consultant
Bobby Song
Référence de l´offre
JN-092022-5775362